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US6J11
l Thermal resistance
Data Sheet
Parameter
Thermal resistance, junction - ambient
Symbol
R thJA *3
R thJA *4
Min.
-
-
Values
Typ.
-
-
Max.
125
391
Unit
°C/W
°C/W
l Electrical characteristics, unless otherwise specified (T a = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Drain - Source breakdown
voltage
Symbol
V (BR)DSS
Conditions
V GS = 0V, I D = - 1mA
Min.
- 12
Values
Typ.
-
Max.
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV (BR)DSS I D = - 1mA
ΔT j referenced to 25°C
-
- 17
-
mV/°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
I DSS
I GSS
V GS (th)
ΔV (GS)th
ΔT j
V DS = - 12V, V GS = 0V
V GS = ? 10V, V DS = 0V
V DS = - 6V, I D = 1mA
I D = - 1mA
referenced to 25°C
-
-
- 0.3
-
-
-
-
2.4
- 1
? 10
- 1.0
-
m A
m A
V
mV/°C
V GS = - 4.5V, I D = - 1.3A
V GS = - 2.5V, I D = - 0.6A
-
-
190
280
260
390
Static drain - source
on - state resistance
R DS(on) *5 V GS = - 1.8V, I D = - 0.6A
V GS = - 1.5V, I D = - 0.2A
V GS = - 4.5V, I D = - 1.3A, T j =125°C
-
-
-
400
530
280
600
1060
400
m W
Gate input resistannce
Transconductance
R G
g fs *5
f = 1MHz, open drain
V DS = - 6V, I D = - 1.3A
-
1.4
28
2.8
-
-
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw ? 10 m s, Duty cycle ? 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.10 - Rev.B
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